| PART |
Description |
Maker |
| CHA2395 |
36-40GHz Low Noise Very High Gain Amplifier
|
United Monolithic Semic...
|
| CHA2395 CHA2395-99F_00 CHA2395-99F/00 |
36-40GHz Low Noise Very High Gain Amplifier 36 - 40GHz的低噪声放大器增益甚
|
United Monolithic Semicondu...
United Monolithic Semiconductors GmbH
|
| AGB3304 AGB3304_REV_0.0 AGB3304S24Q1 |
50 High IP3 Low Noise Wideband Gain Block
Gain Block Amplifiers
From old datasheet system
50з High IP3 Low Noise Wideband Gain Block
|
ANADIGICS[ANADIGICS, Inc]
|
| AGB3301 AGB3301S24Q1 |
50 ohm HGIH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK 250 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
Gain Block Amplifiers
The AGB is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and low ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| BFP520 Q62702-F1794 Q62702-F1491 |
NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)
NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V)
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| CHA2098B CHA2098B99F_00 CHA2098B99F/00 |
20-40GHz High Gain Buffer Amplifier 20 - 40GHz的高增益缓冲放大
|
United Monolithic Semiconductors GmbH
|
| SGA-8343 |
Low Noise/ High Gain SiGe HBT
Low Noise, High Gain SiGe HBT 低噪声，高增益SiGe HBT
|
Ironwood Electronics
ETC[ETC]
List of Unclassifed Manufacturers
|
| AGB3306S24Q1 AGB3306 AGB3306_REV_1.2 |
The AGB3306 is one of a series of high performance InGaP HBT amplifiers designed for use in applications requiring high linearity, ...
50W High Linearity Low Noise Wideband Gain Block
From old datasheet system
Gain Block Amplifiers
|
Anadigics Inc
ANADIGICS[ANADIGICS, Inc]
|
| NTE63 |
Silicon NPN Transistor High Gain / Low Noise Amp
Silicon NPN Transistor High Gain, Low Noise Amp
L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
|
NTE[NTE Electronics]
|
